Differences between MOSFET and IGBT
1.Conductive properties:
– MOSFET: As a field effect transistor, MOSFET conducts electricity mainly by regulating the field effect, so it is more common in low voltage and low power applications.
– IGBT: IGBT combines the characteristics of MOSFET and bipolar transistors and is suitable for medium to high power applications.
2.Control method:
– MOSFET: The voltage to control MOSFET can be very small, and fast switching can be achieved under logic level or low level drive.
– IGBT: The control voltage of IGBT is relatively high, but the current control capability is strong, which is suitable for high current applications.
3.Switching speed:
– MOSFET: Due to the low gate voltage, MOSFET usually has a faster switching speed and is suitable for high frequency applications.
– IGBT: The switching speed of IGBT is relatively slow, which is usually not suitable for high frequency applications, but performs well in the medium to low frequency range.
